to-92s plastic-encapsulate transistors 2SC2785 transistor (npn) features z high voltage z excellent h fe linearity z complementary to 2sa1175 pnp transistor maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 50 v v ebo emitter-base voltage 5 v i c collector current -continuous 0.1 a p c collector power dissipation 0.25 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (tamb=25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =100 a, i e =0 60 v collector-emitter breakdown voltage v (br)ceo i c =1ma, i b =0 50 v emitter-base breakdown voltage v (br)ebo i e =100 a, i c =0 5 v collector cut-off current i cbo v cb =60v, i e =0 0.1 a emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =6v, i c =1ma 110 600 dc current gain h fe(2) v ce =6v, i c =0.1ma 50 collector-emitter saturation voltage v ce(sat) i c =100ma, i b =10ma 0.3 v base-emitter saturation voltage v be(sat) i c =100ma, i b =10ma 1 v base-emitter voltage v be v ce =6v, i c =1ma 0.65 v transition frequency f t v ce =6v, i c =10ma 150 mhz collector output capacitance c ob v cb =6v, i e =0,f=1mhz 4 pf noise figure nf v ce =6v, i c =0.1ma,f=1khz, r g =2k ? 15 db classification of h fe(1) rank rf jf hf ff ef kf range 110-180 135-220 170-270 200-320 250-400 300-600 to-92s 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,jun,2011
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